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Oral presentation

Observation of deep levels in p-type 4H-SiC induced by low-energy electron irradiation

Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Observation of negative-U centers in n-type 6H-SiC using laplace DLTS

Koizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Koike, Shumpei*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; et al.

no journal, , 

no abstracts in English

Oral presentation

Ion induced transient current on SiC MOS capacitor

Makino, Takahiro; Iwamoto, Naoya*; Deki, Manato; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Defects characterization of 4H-SiC p$$^+$$n diode by laplace DLTS

Koike, Shumpei*; Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Ono, Hiroshi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

An Amorphous $$rm SiO_{2}$$/4H-SiC(11-20) interface atomic model generated by first-principals molecular dynamics method

Miyashita, Atsumi; Onuma, Toshiharu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito

no journal, , 

no abstracts in English

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